Mosaid Technologies Assigned Patent

Mosaid Technologies Inc., Ottawa, Canada, has been assigned a patent (11664463) developed by Rhie, Hyoung Seub, Ottawa, Canada, for “NAND flash memory with vertical cell stack structure and method for manufacturing same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed is a method of manufacturing flash memory with a vertical cell stack structure. The method includes forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines. The alignment mark is formed in the substrate outside the cell area of the substrate. After formation of the source lines, cell stacking layers are formed. After forming the cell stacking layers, cell pillars in the cell stacking layers are formed at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.”

The patent application was filed on 2021-07-07 (17/369007).