Key Foundry Assigned Patent

Key Foundry Co., Ltd., Cheongju-si, Korea, has been assigned a patent (11665896) developed by Kim, Kwang Il, Kang, Yang Beom, Lee, Jung Hwan, Cho, Min Kuck, Cheongju-si, Korea, and Kim, Hyun Chul, Chilgok-gun, Korea, for “semiconductor device including nonvolatile memory device and logic device and manufacturing method of semiconductor device including nonvolatile memory device and logic device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor device include a nonvolatile memory device, including a first well region formed in a substrate, a tunneling gate insulator formed on the first well region, a floating gate formed on the tunneling gate insulator, a control gate insulator formed on the substrate, a control gate formed on the control gate insulator, and a first source region and a first drain region formed on opposite sides of the control gate, respectively, and a first logic device, including a first logic well region formed in the substrate, a first logic gate insulator formed on the first logic well region, a first logic gate formed on the first logic gate insulator, wherein the first logic gate comprises substantially a same material as a material of the control gate of the nonvolatile memory device.”

The patent application was filed on 2022-02-07 (17/665927).