CEA Assigned Patent

Commissariat a l’Energie Atomique et aux Energies Alternatives, (CEA), Paris, France, has been assigned a patent (11653506) developed by Andrieu, François, Grenoble, France, for a “resistive 3D memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device is provided with a support and several superimposed levels of resistive memory cells formed on the support, each level having one or more rows of one or more resistive memory cell(s), each resistive memory cell having a variable resistance memory element formed by an area of variable resistivity material arranged between a first electrode and a second electrode. The memory element is connected to a source region or drain region of a control transistor, the control transistor being formed in a given semiconductor layer of a stack of semiconductor layers formed on the support and wherein respective channel regions of respective control transistors of resist memory cells are arranged.”

The patent application was filed on 2019-03-26 (17/040138).