R&D: Cryogenic Memory Technologies

Nature Electronics has published an article written by Shamiul Alam, Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, USA, Md Shafayat Hossain, Department of Physics, Princeton University, Princeton, NJ, USA, Srivatsa Rangachar Srinivasa, Intel Labs, Hillsboro, OR, USA, and Ahmedullah Aziz, Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville, TN, USA.

Abstract: “Cryogenic data storage technology is of use in superconducting single-flux quantum electronics and quantum computing. However, the lack of compatible cryogenic memory technology, which can operate at temperatures of 4 K (or lower), hinders the development of practical and scalable systems. Here we examine the development of cryogenic memory technologies. We explore three areas of memory technology: cryogenic non-superconducting memories (including those based on charge and resistance), superconducting memories (including those based on Josephson junctions, superconducting quantum interference devices and superconducting memristors) and hybrid memories (which use both superconducting and non-superconducting technologies). We consider the key challenges involved in the integration of such memories with single-flux quantum circuits and quantum computers. We also provide a comparison of the capabilities of the different technologies in the context of the requirements of superconducting electronics and quantum computing.“