Weebit Nano Assigned Patent

Weebit Nano Ltd., Hod Hasharon, Isarel, has been assigned a patent (11659720) developed by Dagan, Lior, Tzafon, Israel, for a “silicon over insulator two-transistor one-resistor in-series resistive memory cell.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A resistive random-access memory (ReRAM) array is provided. The ReRAM array includes a silicon over insulator (SOI) substrate, a first bit line, a first inverted bit line of the first bit line, a second bit line, a second inverted bit line of the second bit line, a first word line, a first inverted word line of the first word line, a first ReRAM cell comprising a first MOSFET, a second MOSFET, and a resistive element, and a second ReRAM cell comprising a first MOSFET, a second MOSFET, and a resistive element connected in series, wherein upon applying a predefined potential on elements of the first ReRAM cell, a state of the first ReRAM cell is adjusted without effecting a state of the second ReRAM.”

The patent application was filed on 2021-07-12 (17/373102).