Longitude Flash Memory Solutions Technology Assigned Patent

Longitude Flash Memory Solutions Ltd., Dublin, Ireland, has been assigned a patent (11641745) developed by Ramkumar, Krishnaswamy, San Jose, CA, for “embedded Sonos with a high-k metal gate and manufacturing methods of the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Semiconductor devices and methods of manufacturing the same are provided. The semiconductor devices may have a non-volatile memory (NVM) transistor including a charge-trapping layer and a blocking dielectric, a field-effect transistor (FET) of a first type including a first gate dielectric having a first thickness, a FET of a second type including a second gate dielectric having a second thickness, and a FET of a third type including a third gate dielectric having a third thickness. In some embodiments, the first, second, and third gate dielectric includes a high dielectric constant (high-K) dielectric layer, and the first thickness is greater than the second thickness, the second thickness is greater than the third thickness. Other embodiments are also described.”

The patent application was filed on 2019-08-15 (16/541765).