Samsung Electronics Co., Ltd., Gyeonggi-do, Korea, and Industry-Academic Cooperation Foundation, Yonsei University, Seoul, Korea, has been assigned a patent (11634793) developed by Lee, Eunsung, Hwaseong-si, Korea, Yoon, Duseop, Yoo, Joungeun, Seongnam-si, Korea, and Kim, Dohyang, Seoul, Korea, for “quasicrystalline material and semiconductor device applying the same.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A quasicrystalline material and a semiconductor device to which the quasicrystalline material is applied are disclosed. A quasicrystalline material is based on a quasicrystalline element having one or more axis of symmetry (e.g., a 2-fold axis, a 3-fold axis, a 5-fold axis, or a higher fold axes of symmetry). The quasicrystalline material is capable of phase changes between a quasicrystalline phase and an approximant crystalline phase having a further regular atom arrangement than the quasicrystalline phase. The quasicrystalline material that may be used as a phase change material and may be applied to a phase change layer of a semiconductor device.”
The patent application was filed on 2020-01-30 (16/776729).