Gowin Semiconductor Corporation, Guangzhou, China, has been assigned a patent (11637556) developed by Zhu, Jinghui, San Jose, CA, for “method and system for providing word addressable nonvolatile memory in a programmable logic device.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A programmable integrated circuit device able to be selectively programmed to perform one or more logic functions includes multiple configurable logic blocks (LBs), routing fabric, and a nonvolatile memory (NVM). While the configurable LBs are able to be selectively programmed to perform one or more logic functions, the routing fabric selectively routes information between the configurable LBs and input/output ports based on a routing configuration signals. The NVM, such as magnetoresistive random access memory (MRAM), phase-change memory, or ferroelectric RAM (FeRAM), is flexibly organized to contain a configuration NVM storage and a user NVM storage, wherein the user NVM storage is a word addressable memory capable of facilitating random memory access.”
The patent application was filed on 2021-04-07 (17/225022).