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Nanya Technology Assigned Patent

Method for testing memory device and test system

Nanya Technology Corp., New Taipei, Taiwan, has been assigned a patent (11621052) developed by Chen, Jyun-Da, Taoyuan, Taiwan, for “method for testing memory device and test system.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for testing a memory device includes the following steps of: generating a first refresh command to the memory device, storing a first refresh address information into a register of the memory device according to the first refresh command, reading out the first refresh address information according to a mode register read command, comparing the first refresh address information with an expectation address information to generate a comparison result, and generating a second refresh command to the memory device or screening out the memory device according to the comparison result.

The patent application was filed on 2021-12-13 (17/643841).

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