Institute of Microelectronics/Chinese Academy of Sciences Assigned Patent

Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China, has been assigned a patent (11626498) developed by Zhu, Huilong, Poughkeepsie, NY, for “semiconductor memory device, method of manufacturing the same, and electronic device including the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor memory device that may include a substrate, an array of memory cells arranged in rows and columns, bit lines and word lines. The memory cells each may include a pillar-shaped active region extending vertically, which includes source/drain regions at upper and lower ends respectively and a channel region between the source/drain regions. The channel region may include a single-crystalline semiconductor material. The memory cells each may further include a gate stack formed around a periphery of the channel region. Each of the bit lines is located below a corresponding column, and electrically connected to the lower source/drain regions of the respective memory cells in the corresponding column. Each of the word lines is electrically connected to the gate stacks of the respective memory cells in a corresponding row.”

The patent application was filed on 2018-09-06 (16/123016).