Avalanche Technology Assigned Two Patents

Locally timed sensing of memory device
Avalanche Technology, Inc., Fremont, CA, has been assigned a patent (11610616) developed by Nobunaga, Dean K., Cupertino, CA, for “locally timed sensing of memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention is directed to a nonvolatile memory device including a plurality of memory cells arranged in rows and columns, a plurality of word lines with each connected to a respective row of the memory cells along a row direction, a plurality of bit lines with each connected to a respective column of the memory cells along a column direction, a column decoder connected to the bit lines, a plurality of sense amplifiers connected to the column decoder, and a plurality of sense amplifier control circuits. Each of the sense amplifiers is connected to a unique one of the sense amplifier control circuits. Each of the sense amplifier control circuits includes a current detector circuit for detecting a sensing current, a current booster circuit for boosting the sensing current, and a timer circuit for providing a delayed trigger for a respective one of the sense amplifiers connected thereto.”

The patent application was filed on 2020-06-12 (16/900470).

Bidirectional selector device for memory applications
Avalanche Technology, Inc., Fremont, CA, has been assigned a patent (11538857) developed by Wei; Zhiqiang, Pleasanton, CA, and Yang; Hongxin, Newark, CA, for a “bidirectional selector device for memory applications.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present invention is directed to a magnetic memory cell including a magnetic tunnel junction (MTJ) memory element and a two-terminal bidirectional selector coupled in series between two conductive lines. The MTJ memory element includes a magnetic free layer, a magnetic reference layer, and an insulating tunnel junction layer interposed therebetween. The two-terminal bidirectional selector includes bottom and top electrodes, first and third volatile switching layers interposed between the bottom and top electrodes, and a second volatile switching layer interposed between the first and third volatile switching layers. The bottom and top electrodes each independently include one of titanium nitride or iridium. The first and third volatile switching layers each include tantalum oxide and silver. The second volatile switching layer includes hafnium oxide and has a higher electrical resistance than the first and third volatile switching layers.”

The patent application was filed on 2020-04-01 (16/836922).