R&D: Recent Advances in Doped Ge2Sb2Te5 Thin Films Based Phase Change Memories

Materials Advances has published an article written by Neeru Bala, Bheem Khan, Kamaljit Singh, Advanced Materials Research Lab, Department of Physics, Punjabi University Patiala, 147 002 Punjab, India, Palwinder Singh, Department of Physics Atmospheric Science Dalhousie University, Halifax, NS, Canada, Abhinav Pratap Pratap Singh, Department of Physics, Dr B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab 144 011, India, and Anup Thakur, Advanced Materials Research Lab, Department of Physics, Punjabi University Patiala, 147 002 Punjab, India.

Abstract: “Nowadays, chalcogenide-based phase change materials (PCMs) are proving themselves superior in the category of memory devices due to a combination of their unique set of properties. PCMs have the capability of reversible switching, which makes them unique among all other existing data storage devices. Among various existing PCMs, stoichiometric composition Ge2Sb2Te5 (GST) is considered as one of the best composition on the pseudo-binary tie line of GeTe-Sb2Te3. They can exhibit fast read and write speeds, high scalability, and better data retention. Despite these commendable advantages, some key challenges need to be addressed, such as the limited cyclability, high RESET current, and weak thermal stability. A probable approach to deal with these challenges effectively can be either by varying GST composition or doping a suitable element in the host lattice. Over the past few years, several types of dopants have been added to make GST composition applicable for fast processing memory and high-speed switching devices. The present review briefly summarizes the effect of various dopants on the various properties of GST thin films. The comprehension of doping-induced properties of GST material helps to recognize the technological applicability for desired applications and opens up a window in the context of new applications.“