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Government of USA/Secretary of Navy Assigned Patent

Multistate magnetic memory element using metamagnetic materials

The Government of the United States of America, as represented by the Secretary of the Navy, Washington, DC, has been assigned a patent (11605410) developed by van ‘t Erve, Olaf M. J., Falls Church, VA, Bennett, Steven P., Alexandria, VA, and Friedman, Adam L., Silver Spring, MD, for a multistate magnetic memory element using metamagnetic materials.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.

The patent application was filed on 2021-06-29 (17/362355).

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