Government of USA/Secretary of Navy Assigned Patent
Multistate magnetic memory element using metamagnetic materials
By Francis Pelletier | April 20, 2023 at 2:00 pmThe Government of the United States of America, as represented by the Secretary of the Navy, Washington, DC, has been assigned a patent (11605410) developed by van ‘t Erve, Olaf M. J., Falls Church, VA, Bennett, Steven P., Alexandria, VA, and Friedman, Adam L., Silver Spring, MD, for a “multistate magnetic memory element using metamagnetic materials.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: “A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising an electronic memory logic element with four stable resistance states. A metamagnetic tunneling-based spin valve device for multistate magnetic memory comprising a layer of a metamagnetic material, a layer of a nonmagnetic material on the layer of a metamagnetic material, and a layer of a ferromagnetic material on the layer of a nonmagnetic material. A method of making a metamagnetic tunneling-based spin valve device for multistate magnetic memory.”
The patent application was filed on 2021-06-29 (17/362355).











