R&D: Interface Engineering of 9x Stacked 3D NAND Flash Memory Using Hydrogen Post-Treatment Annealing
Hydrogen post-treatment annealing suggested to passivate defects in tunneling oxide/poly-Si interface and inside poly-Si channel.
This is a Press Release edited by StorageNewsletter.com on March 23, 2023 at 2:00 pmNanotechnology has published an article written by Saeyan Choi, Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea, Seungsob Kim, R&D Division, SK Hynix Semiconductor Inc., San 136-1 Ami, Bubal, Icheon, Gyeonggi 467-701, Republic of Korea, Seain Bang, Jungchun Kim, Dong Geun Park, Seunghee Jin, and Min Jung Kim, Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea, Eunmee Kwon, R&D Division, SK Hynix Semiconductor Inc., San 136-1 Ami, Bubal, Icheon, Gyeonggi 467-701, Republic of Korea, and Jae Woo Lee, Interdisciplinary Graduate Program for Artificial Intelligence Smart Convergence Technology, Korea University, 2511 Sejong-ro, Sejong, 339-700 Republic of Korea.
Abstract: “This study investigates the effects of hydrogen post-treatment on 3D NAND flash memory. Hydrogen post-treatment annealing (PTA) is suggested to passivate the defects in the tunneling oxide/poly-Si interface and inside the poly-Si channel. However, excess hydrogen PTA can release hydrogen atoms from the passivated defects, which may degrade device performance. Therefore, it is important to determine the appropriate PTA condition for optimization of the device performance. Three different conditions for hydrogen PTA, namely Reference, H, and H++, are applied to observe the effects on device performance. The activation energy () of the device parameters was extracted according to the hydrogen PTA condition to analyze the effects. The extracted is about 74 meV for Reference, 53 meV for H, and 58 meV for H++ conditions, with the best performance observed at the H condition. Optimal hydrogen PTA shows the best on-current (51% higher than Reference) and stable short-term retention (66% suppressed VT than Reference) in 9X stacked 3D NAND flash memory.“
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