R&D: Review of Cell Operation Algorithm for 3D NAND Flash Memory
To improve cell characteristics and reliability in terms of optimization of individual program, read and erase operation, and system level performanceThis is a Press Release edited by StorageNewsletter.com on March 16, 2023 at 2:00 pm
Applied Sciences has published an article written by Jong Kyung Park, and Sarah Eunkyung Kim, Department of Semiconductor Engineering, Seoul National University of Science and Technology, Gongneung-ro 232, Nowon-gu, Seoul 01811, Korea.
Abstract: “The size of the memory market is expected to continue to expand due to the digital transformation triggered by the fourth industrial revolution. Among various types of memory, NAND flash memory has established itself as a major data storage medium based on excellent cell characteristics and manufacturability; as such, the demand for increasing the bit density and the performance has been rapidly increasing. In this paper, we will review the device operation algorithm and techniques to improve the cell characteristics and reliability in terms of optimization of individual program, read and erase operation, and system level performance.“