Semiconductor Components Industries Assigned Patent
Process of forming electronic device including NVM cell
By Francis Pelletier | February 7, 2023 at 2:00 pmSemiconductor Components Industries, LLC, Phoenix, AZ, has been assigned a patent (11545583) developed by Chen, Weize, Phoenix, AZ, Haddad, Sameer S., San Jose, CA, Greenwood, Bruce B., Gresham, OR, Griswold, Mark, Gilbert, AZ, and Bates, Kenneth A., Happy Valley, OR, for a “process of forming an electronic device including a non-volatile memory cell.”
The abstract of the patent published by the U.S. Patent and Trademark Office states: “An electronic device can include a NVM cell. The NVM cell can include a drain/source region, a source/drain region, a floating gate electrode, a control gate electrode, and a select gate electrode. The NVM cell can be fabricated using a process flow that also forms a power transistor, high-voltage transistors, and low-voltage transistors on the same die. A relatively small size for the NVM can be formed using a hard mask to define a gate stack and spacer between gate stack and select gate electrode. A gate dielectric layer can be used for the select gate electrode and transistors in a low-voltage region and allows for a fast read access time.”
The patent application was filed on 2021-02-05 (17/248750).
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