Industry-University Cooperation Foundation Hanyang University Assigned Patent
Ferroelectric material-based 3D flash memory, and manufacturing
By Francis Pelletier | February 1, 2023 at 2:10 pmIUCF-HYU (Industry-University Cooperation Foundation Hanyang University), Seoul, Korea, has been assigned a patent (11515333) developed by Song, Yun Heub, Choi, Chang Wan, and Jeong, Jae Kyeong, Seoul, Korea, for “ferroelectric material-based three-dimensional flash memory, and manufacture thereof.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed are: a three-dimensional flash memory in which the degree of integration in a horizontal direction is improved so as to promote integration, and a manufacturing method therefor. A three-dimensional flash memory according to one embodiment comprises: at least one channel layer extending in one direction, at least one ferroelectric film used as a data storage place while being extended in the one direction so as to encompass the at least one channel layer, and a plurality of electrode layers stacked so as to be vertically connected to the at least one ferroelectric film.”
The patent application was filed on 2019-12-26 (17/422801).