Weebit Nano Assigned Patent

Weebit Nano Ltd., Hod Hasharon, Israel, has been assigned a patent (11538524) developed by Dagan, Lior, Tzafon, Israel, for a “silicon over insulator two-transistor two-resistor in-series resistive memory cell.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A resistive random-access memory (ReRAM) cell formed on a silicon over insulator substrate (SOI) is provided. The ReRAM includes a SOI substrate, a first MOSFET and a second MOSFET, each of which having a drain port, a gate port, a source port, and a bulk port. The drain port of the second MOSFET is connected to the source port of the first MOSFET; a first resistive element and a second resistive element, each having a first port and a second port, wherein the first ports of both resistive elements are connected to the drain of the first MOSFET; a first word line and a second word line connected to the gate port of the first MOSFET and the second MOSFET, respectively; and the of the ReRAM cell is determined upon applying a predefined potential.”

The patent application was filed on 2021-07-12 (17/373118).