Samsung 16Gb DDR5 DRAM Built Using 12nm-Class Process Technology

Samsung Electronics Co., Ltd. developed its 16Gb DDR5 DRAM built using the industry’s first 12nm-class process technology, as well as the completion of product evaluation for compatibility with AMD (Advanced Micro Devices, Inc.).

“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, EVP, DRAM product and technology, Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.”

“Innovation often requires close collaboration with industry partners to push the bounds of technology,” said Joe Macri, SVP, corporate fellow and client, compute and graphics CTO, AMD. “We are thrilled to once again collaborate with Samsung, particularly on introducing DDR5 memory products that are optimized and validated on ‘Zen’ platforms.”

This technological leap was made possible through the use of a new high-κ material that increases cell capacitance, and proprietary design technology that improves critical circuit characteristics. Combined with multi-layer extreme ultraviolet (EUV) lithography, this DRAM features the industry’s highest die density, which enables a 20% gain in wafer productivity.

Leveraging the latest DDR5 standard, the company’s 12nm-class DRAM will help unlock speeds of up to 7.2Gb/s. This translates into processing 2x30GB UHD movies in 1s.

This DRAM’s speed is matched by greater power efficiency. Consuming up to 23% less power than the previous DRAM, the 12nm-class DRAM will be a solution for global IT companies pursuing more environment-friendly operations.

With mass production set to begin in 2023, the company plans to broaden its DRAM lineup built on this 12nm-class process technology into a range of market segments, as it continues to work with industry partners to support the rapid expansion of next-gen computing.