Kioxia and SK Hynix Assigned Patent

Kioxia Corp., Tokyo, Japan, and SK Hynix Inc., Gyeonggi-Do, Korea, has been assigned a patent (11495740) developed by Isoda, Taiga, Kitagawa, Eiji, Seoul, Korea, Eeh, Young Min, Seongnam-si, Korea, Oikawa, Tadaaki, Sawada, Kazuya, Seoul, Korea, Yoshino, Kenichi, Seongnam-si, Korea, Lim, Jong Koo, Icheon-si, Korea, Jung, Ku Youl, Seoul, Korea, and Kim, Guk Cheon, Icheon-si, Korea, for a “magnetoresistive memory device.”

The abstract of the patent published by the U.S. Patent and Trademark Office states: “According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer, a stoichiometric first layer, a first insulator between the first ferromagnetic layer and the first layer, a second ferromagnetic layer between the first insulator and the first layer, and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.” The patent application was filed on 2020-03-10 (16/813827).