Samsung Electronics Begins Mass Production of 1Tb TLC 8th-Gen V-NAND

Samsung Electronics Co., Ltd. begun mass producing a 1Tb TLC 8th-gen V-NAND.

At 1Tb, the V-NAND also features the highest storage capacity to date, enabling larger storage space in next-gen enterprise server systems WW.

“As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down,” said SungHoi Hur, EVP, flash product and technology. “Our 8th-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations.”

The company was able to attain this bit density by enhancing the bit productivity per wafer. Based on the Toggle DDR 5.0 interface ^(*) – the latest NAND flash standard – the firm 8th-gen V-NAND features an I/O speed of up to 2.4Gb/s, a 1.2x boost over the previous gen. This will enable this V-NAND to accommodate the performance requirements of PCIe 4.0, and later PCIe 5.0.

The 8th-gen V-NAND is expected to serve as the cornerstone for storage configurations that help expand the storage capacity in next-gen enterprise servers, while extending its use into the automotive market where reliability is critical.

^(*) Toggle DDR interface generations- 1.0 (133Mb/s), 2.0 (400Mb/s), 3.0 (800Mb/s), 4.0 (1,200Mb/s), 5.0 (2,400Mb/s)