R&D: Wafer-Scale Solution-Processed 2D Material Analog Resistive Memory Array for Memory-Based Computing

Nature Communications has published an article written by Baoshan Tang, Hasita Veluri, Yida Li, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore, Zhi Gen Yu, Institute of High Performance Computing, Singapore, 138632, Singapore, Moaz Waqar, Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore, Jin Feng Leong, Maheswari Sivan, Evgeny Zamburg, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore, Yong-Wei Zhang, Institute of High Performance Computing, Singapore, 138632, Singapore, John Wang, Department of Materials Science and Engineering, National University of Singapore, Singapore, 117574, Singapore, and Aaron V-Y. Thean, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, 117576, Singapore.

Abstract: “Realization of high-density and reliable resistive random access memories based on two-dimensional semiconductors is crucial toward their development in next-generation information storage and neuromorphic computing. Here, wafer-scale integration of solution-processed two-dimensional MoS₂ memristor arrays are reported. The MoS₂ memristors achieve excellent endurance, long memory retention, low device variations, and high analog on/off ratio with linear conductance update characteristics. The two-dimensional nanosheets appear to enable a unique way to modulate switching characteristics through the inter-flake sulfur vacancies diffusion, which can be controlled by the flake size distribution. Furthermore, the MNIST handwritten digits recognition shows that the MoS₂ memristors can operate with a high accuracy of >98.02%, which demonstrates its feasibility for future analog memory applications. Finally, a monolithic three-dimensional memory cube has been demonstrated by stacking the two-dimensional MoS₂ layers, paving the way for the implementation of two memristor into high-density neuromorphic computing system.“