R&D: Longitudinal and Latitudinal Split-Gate Field-Effect Transistors for NAND and NOR Logic Circuit Applications

npj 2D Materials and Applications has published an article written by Minjong Lee, Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, South Korea, and Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080, USA, Chang Yong Park, Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, South Korea, Do Kyung Hwang, Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea, and Division of Nanoscience and Technology, KIST School, University of Science and Technology (UST), Seoul, 02792, South Korea, Min-gu Kim, Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, South Korea, and Department of Information and Communication Engineering, Inha University, Incheon, 22212, South Korea, and Young Tack Lee, Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, South Korea, and Department of Electronic Engineering, Inha University, Incheon, 22212, South Korea.

Abstract: “Two-dimensional (2D) materials have been extensively adopted in various device architectures for advanced applications owing to their structural diversity, high functionality, and ease of integration. Among the various architectures, split-gate field-effect transistors (SG-FETs) have been widely studied based on their sequentially located SG electrode along the source/drain electrodes. In this paper, we propose two different homogeneous molybdenum disulfide (MoS₂)-based SG-FET structures, namely AND-FET and OR-FET, whose gap directions are perpendicular to each other. It can exhibit AND or OR switching characteristics if it has a longitudinal or latitudinal gapped SG structure, respectively. Moreover, the AND-FET and OR-FET are regarded as folded structures of series and parallel connections of two n-type transistors. By using these switching devices, we successfully demonstrate NAND and NOR logic gates through a single active channel. These approaches are expected to pave the way for the realization of multi-functionality and high integration of 2D material-based future electronic devices.“