R&D: C/Sb Superlattice-Like Films with High Thermal Stability and Low Power Consumption for Phase-Change Memory

Journal of Electronic Materials has published an article written by Xiaotian Zeng, Xiaoqin Zhu, Yifeng Hu, School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, 213001, China, and Zhitang Song, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.

Abstract: “The physical properties and device electrical properties of superlattice-like C/Sb phase change films are investigated. Compared with Sb monolayer films, the superlattice-like C/Sb films have preferable thermal stability, including higher crystallization temperature, longer data life, and larger crystallization activation energy. As the thickness of the carbon layer increases, the band gap gradually increases. X-ray photoelectron spectroscopy results show that C-Sb bonds exist in the C/Sb superlattice-like films. X-ray diffraction and atomic force microscope results show that the addition of carbon inhibits the grain growth, making the grain size smaller and inhibiting the crystallization of Sb materials. Phase-change memory devices based on [C(6nm)/Sb(4nm)]₈ superlattice-like films have smaller threshold voltages and lower power consumption compared to Sb films. In conclusion, C/Sb superlattice-like films have high thermal stability and low power consumption.“