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STMicroelectronics and CEA Assigned Patent

Memory device

STMicroelectronics S.r.l., Agrate Brianza, Italy and Commissariat à L’Energie Atomique et aux Energies Alternatives (CEA), Paris, France, has been assigned a patent (11355702) developed by Cappelletti, Paolo Giuseppe, Seveso, Italy, and Navarro, Gabriele, Moirans, France, for a memory device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

The patent application was filed on 2019-08-06 (16/533255).
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