R&D: 2D Materials Prospects for Non-Volatile Spintronic Memories

Nature has published an article written by Hyunsoo Yang, Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore, Sergio O. Valenzuela, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain, and ICREA, Institució Catalana de Recerca i Estudis Avancats, Barcelona, Spain, Mairbek Chshiev, Université Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France, and Institut Universitaire de France (IUF), Paris, France, Sébastien Couet, Imec, Leuven, Belgium, Bernard Dieny, Université Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France, Bruno Dlubak, Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France, Albert Fert, Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France, Kevin Garello, Université Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France, and Imec, Leuven, Belgium, Matthieu Jamet, Université Grenoble Alpes, CEA, CNRS, SPINTEC, Grenoble, France, Dae-Eun Jeong, R&D Center, Samsung Electronics Co., Hwasung, South Korea, Kangho Lee, Foundry Business, Samsung Electronics Co., Giheung, South Korea, Taeyoung Lee, GlobalFoundries Singapore Pte. Ltd., Singapore, Singapore, Marie-Blandine Martin, Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France, and Thales Research and Technology, Palaiseau, France, Gouri Sankar Kar, Imec, Leuven, Belgium, Pierre Sénéor, Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, Palaiseau, France, Hyeon-Jin Shin, Inorganic Material Lab, Samsung Advanced Institute of Technology (SAIT), Suwon, South Korea, and Stephan Roche, Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Barcelona, Spain, and ICREA, Institució Catalana de Recerca i Estudis Avancats, Barcelona, Spain.

Abstract: “Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin–orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. Concurrently, the development and performances of devices based on two-dimensional van der Waals heterostructures bring ultracompact multilayer compounds with unprecedented material-engineering capabilities. Here we provide an overview of the current developments and challenges in regard to MRAM, and then outline the opportunities that can arise by incorporating two-dimensional material technologies. We highlight the fundamental properties of atomically smooth interfaces, the reduced material intermixing, the crystal symmetries and the proximity effects as the key drivers for possible disruptive improvements for MRAM at advanced technology nodes.“