STMicroelectronics Assigned Four Patents

Phase change memory and method of programming
STMicroelectronics S.R.L., Agrate Brianza, Italy, has been assigned a patent (11462269) developed by Campardo, Giovanni, Bergamo, Italy, Borghi, Massimo, Varese, Italy, Zuliani, Paola, Milan, Italy, Barboni, Marco, Cambiago, Italy, for “phase change memory device and method of programming a phase change memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An embodiment phase-change memory device includes a memory array provided with a plurality of phase-change memory cells, each having a body made of phase-change material and a first state, in which the phase-change material is completely in an amorphous phase, and at least one second state, in which the phase-change material is partially in the amorphous phase and partially in a crystalline phase. A programming-pulse generator applies to the memory cells rectangular dynamic-programming pulses having an amplitude and a duration calibrated for switching the memory cells from the first state to the second state.”

The patent application was filed on 2020-11-16 (17/099257).

Phase-change memory with insulated walls
STMicroelectronics (Crolles 2) SAS, Crolles, France, and STMicroelectronics (Rousset) SAS, Rousset, France, has been assigned a patent (11411177) developed by Boivin, Philippe, Venelles, France, Benoit, Daniel, Grenoble, France, and Berthelon, Remy, Saint Martin Heres, France, for a “phase-change memory with insulated walls.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure concerns a phase-change memory manufacturing method and a phase-change memory device. The method includes forming a first insulating layer in cavities located vertically in line with strips of phase-change material, and anisotropically etching the portions of the first insulating layer located at the bottom of the cavities, and a phase-change memory device including a first insulating layer against lateral walls of cavities located vertically in line with strips of phase-change material.”

The patent application was filed on 2020-05-20 (16/879577).

Programming phase-change memory of differential type
STMicroelectronics S.r.l., Agrate Brianza, Italy, has been assigned a patent (11355191) developed by Disegni, Fabio Enrico Carlo, Spino d’adda, Italy, Perroni, Maurizio Francesco, Messina, Italy, and Torti, Cesare, Pavia, Italy, for “method for programming a phase-change memory device of differential type, phase-change memory device, and electronic system.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An embodiment method for programming a differential type phase-change memory device comprises, in a first time interval, programming a direct memory cell or the respective complementary one pertaining to a first programming driver by means of a current between SET and RESET, and, in the same first time interval, simultaneously programming a direct memory cell or the respective complementary one pertaining to a second programming driver by means of the same current between SET and RESET. The method further comprises, in a second time interval, programming the other direct memory cell or the respective complementary one pertaining to the first programming driver by means of the other current between SET and RESET, and, in the same second time interval, simultaneously programming the other direct memory cell or the respective complementary one pertaining to the second programming driver by means of the same other current between SET and RESET.”

The patent application was filed on 2020-10-16 (17/072887).

Phase change memory, system including memory device, and method for operating memory
STMicroelectronics S.r.l., Agrate Brianza, Italy, has been assigned a patent (11328768) developed by Perroni, Maurizio Francesco, Messina, Italy, Disegni, Fabio Enrico Carlo, Spino d’adda, Italy, Manfré, Davide, Pandino, Italy, and Torti, Cesare, Pavia, Italy, for “phase change memory device, system including the memory device, and method for operating the memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “In an embodiment, the column decoder of a PCM device is divided into two portions that can be governed independently of one another, and the driving signals of the two portions are configured so as to guarantee comparable capacitive loads at the two inputs of a sense amplifier in both of the operations of single-ended reading and double-ended reading. In particular, during single-ended reading, the sense amplifier has a first input that receives a capacitive load corresponding to the direct memory cell selected, and a second input that receives a capacitive load associated to a non-selected complementary memory cell.”

The patent application was filed on 2020-12-11 (17/119979).