Everspin Technologies Assigned Seven Patents

Implementing and managing persistent memory
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,436,087) developed by Bishnoi, Pankaj, Smith, Trevor Sydney, Austin, TX, and MacDonald, James, Buda,https://ppubs.uspto.gov/pubwebapp/external.html?q=%20(11,436,087).pn.&db=%20USPAT&type=%20ids TX, for “systems and methods for implementing and managing persistent memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure is drawn to, among other things, a method of managing a memory device. In some aspects, the method includes receiving data to be stored in a storage memory, wherein the storage memory is coupled to the memory device, wherein the memory device includes a first memory type and a second memory type different from the first memory type, storing a first copy of the received data in the first memory type, storing a second copy of the received data in the second memory type, receiving indication of a power loss to the memory device, in response to receiving indication of the power loss, copying the second copy from the second memory type to the storage memory, detecting for power restoration to the memory device after the power loss, and in response to detecting power restoration to the memory device, restoring data to the first memory type by copying data from the second memory type to the first memory type.”

The patent application was filed on May 30, 2018 (15/993,046).

Magnetic memory using spin-orbit torque
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,342,497) developed by Chia, Han-Jong, Hsinchu, Taiwan, for a “magnetic memory using spin-orbit torque.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Spin-orbit-torque (SOT) segments are provided along the sides of free layers in magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SOT segments injects spin current into the free layers such that spin torque is applied to the free layers. The spin torque can be used as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction in order to improve the efficiency of the switching current applied to the magnetoresistive device.”

The patent application was filed on February 2, 2021 (17/165,092).

Forming magnetoresistive devices and integrated circuits
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,335,728) developed by Nagel, Kerry Joseph, Aggarwal, Sanjeev, Scottsdale, AZ, Andre, Thomas, Austin, TX, and Deshpande, Sarin A., San Jose, CA, for “methods of forming magnetoresistive devices and integrated circuits.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Magnetoresistive device architectures and methods for manufacturing are presented that facilitate integration of process steps associated with forming such devices into standard process flows used for surrounding logic/circuitry. In some embodiments, the magnetoresistive device structures are designed such that the devices are able to fit within the vertical dimensions of the integrated circuit associated with a single metal layer and a single layer of interlayer dielectric material. Integrating the processing for the magnetoresistive devices can include using the same standard interlayer dielectric material as used in the surrounding circuits on the integrated circuit as well as using standard vias to interconnect to at least one of the electrodes of the magnetoresistive devices.”

The patent application was filed on May 22, 2020 (16/881,958).

Magnetoresistive devices and methods
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,264,564) developed by Ikegawa, Sumio, Phoenix, AZ, Almasi, Hamid, Chandler, AZ, Shimon,, Singapore, Singapore, Nagel, Kerry, Scottsdale, AZ, and Lee, Han Kyu, Chandler, AZ, for “magnetoresistive devices and methods therefor.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetoresistive device may include one or more electrodes or electrically conductive lines and a fixed region and a free region disposed between the electrodes or electrically conductive lines. The fixed region may have a fixed magnetic state and the free region may be configured to have a first magnetic state and a second magnetic state. The free region may store a first value when in the first magnetic state and store a second value when in the second magnetic state. The magnetoresistive device may further include a dielectric layer between the free region and the fixed region and a spin-Hall (SH) material proximate to at least a portion of the free region. An insertion layer may be disposed between the SH material and the free region.”

The patent application was filed on February 6, 2020 (16/783,740).

Magnetoresistive devices and methods of fabricating
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,211,553) developed by Aggarwal, Sanjeev, and Nagel, Kerry Joseph, Scottsdale, AZ, for “magnetoresistive devices and methods of fabricating such devices.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An integrated circuit (IC) device includes a logic portion including logic circuits in multiple vertically stacked metal layers interconnected by one or more via layers, and a memory portion with a plurality of magnetoresistive devices. Each magnetoresistive device is provided in a single metal layer of the multiple vertically stacked metal layers of the IC device.”

The patent application was filed on September 17, 2019 (16/572,982).

Magnetoresistive stack/structure and method of manufacturing
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,189,785) developed by Deshpande, Sarin A., San Jose, CA, Nagel, Kerry Joseph, Scottsdale, AZ, Mudivarthi, Chaitanya, Sunnyvale, CA, and Aggarwal, Sanjeev, Scottsdale, AZ, for “magnetoresistive stack/structure and method of manufacturing same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer. (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.”

The patent application was filed on April 10, 2020 (16/845,405).

Magnetoresistive stack/structure including metal insertion substance
Everspin Technologies, Inc., Chandler, AZ, has been assigned a patent (11,189,781) developed by Ikegawa, Sumio, Phoenix, AZ, for “magnetoresistive stack/structure including metal insertion substance.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetoresistive device comprises a fixed magnetic region positioned on or over a first electrically conductive region, an intermediate layer positioned on or over the fixed magnetic region, a free magnetic region positioned on or over the intermediate layer, and a metal insertion substance positioned in contact with the free magnetic region, wherein the metal insertion substance includes one or more transition metal elements.”

The patent application was filed on July 9, 2018 (16/029,938).