R&D: New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

IEEE Transactions on Device and Materials Reliability has published an article written by Matchima Buddhanoy, Sadman Sakib, Umeshwarnath Surendranathan, Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, AL, USA, Maryla Wasiolek, Khalid Hattar, Sandia National Laboratories, Albuquerque, NM, USA, Aleksandar Milenković, and Biswajit Ray, Department of Electrical and Computer Engineering, The University of Alabama in Huntsville, Huntsville, AL, USA.

Abstract: “This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). The results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.“