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IP2IPO Innovations Assigned Patent

NVM cell

IP2IPO Innovations Limited, London, Great Britain, has been assigned a patent (11,411,171) developed by Zemen, Jan, Celakovice, Czech Republic, Zou, Bin, and Mihai, Andrei, London, Great Britain, for a non-volatile memory cell.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The disclosed non-volatile memory cell comprises a storage layer of an electrically insulating polarisable material in which data is recordable as a direction of electric polarisation, preferably of ferroelectric material, arranged between a magnetically frustrated layer, preferably of Mn-based antiperovskite piezomagnetic material and a conduction electrode. The magnetically frustrated layer has a different change in density of states relative to the conduction electrode in response to a change in electric polarisation of the storage layer, such that an electron or spin tunnelling resistance across the storage layer is dependent on the direction of electric polarisation.

The patent application was filed on August 6, 2019 (17/265,853).