STMicroelectronics Assigned Patent

STMicroelectronics (Rousset) SAS, Rousset, France, has been assigned a patent (11,393,537) developed by Tailliet, Francois, Fuveau, France, and Battista, Marc, Allauch, France, for a “compact non-volatile memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory device includes a substrate, a plurality of memory words, a control block, a first electrically-conducting link, and a plurality of second electrically-conducting links. The substrate includes a substantially planar surface. The memory words include B memory words disposed at the substantially planar surface. The control block includes B control elements disposed at the substantially planar surface. The first electrically-conducting link is disposed in a first plane parallel to the substantially planar surface. The first electrically-conducting link connects one of the B control elements to a memory word of the memory words. The plurality of second electrically-conducting links includes B-1 second electrically-conducting links respectively connecting B-1 remaining control elements to B-1 corresponding memory words of the plurality of memory words. The B-1 second electrically-conducting links are disposed above the first plane and physically extend at least partially over at least two memory words of the memory words.”

The patent application was filed on July 15, 2019 (16/511,703).