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Cyberwarm Assigned Patent

PCM-based resistive memory contains resistive layer and 2 electrical contacts.

Cyberwarm, Inc., Ploiesti, Romania, has been assigned a patent (11,386,953) developed by Dumitru, Viorel-Georgel, Ploiesti, Romania, Besleaga Stan, Cristina, Velea, Alin, Bucharest, Romania, and Galca, Aurelian-Catalin, Magurele, Romania, for multiple memory states device and method of making same.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase-change material based resistive memory contains a resistive layer and two electrical contacts. After fabrication the memory is subjected to thermal treatment which initiates a transition toward a crystalline state favoring in this way the subsequent obtaining of a large number of resistive memory states.

The patent application was filed on October 22, 2019 (16/659,608).

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