Unity Semiconductor Corporation, San Jose, CA, has been assigned a patent (11,367,751) developed by Bateman, Bruce Lynn, Fremont, CA, for “vertical cross-point arrays for ultra-high-density memory applications.“
The abstract of the patent published by the U.S. Patent and Trademark Office states: “An ultra-high-density vertical cross-point array comprises a plurality of horizontal line layers having horizontal lines interleaved with a plurality of vertical lines arranged in rows and columns. The vertical lines are interleaved with the horizontal lines such that a row of vertical lines is positioned between each consecutive pair of horizontal lines in each horizontal line layer. Each vertical line comprises a center conductor surrounded by a single or multi-layered memory film. Accordingly, when interleaved with the horizontal lines, two-terminal memory cells are integrally formed between the center conductor of each vertical line and each crossing horizontal line. By configuring the vertical and horizontal lines so that a row of vertical lines is positioned between each consecutive pair of horizontal lines, a unit memory cell footprint of just 2F.sup.2 may be realized.”
The patent application was filed on September 23, 2020 (16/948,575).