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Antaios and CNRS Assigned Patent

Magnetic memory cell having deterministic switching and high data retention

Antaios, Meylan, France, and Centre National De La Recherche Scientifique, (CNRS) Paris, France, has been assigned a patent (11,380,839) developed by Kula, Witold, Gilroy, CA, Drouard, Marc, Valence, France, Gaudin, Gilles, Corenc, France, and Nozieres, Jean-Pierre, Le Sappey-en-Chartreuse, France, for a magnetic memory cell having deterministic switching and high data retention.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetic memory (MRAM) cell, comprising: a first layer formed from a substantially electrically conductive material, and a magnetic tunnel junction (MTJ) stack formed over the first layer, wherein the MTJ stack comprises: a ferromagnetic reference layer having an in-plane reference magnetization, a tunnel barrier layer, and a ferromagnetic storage layer between the tunnel barrier layer and the first layer, the storage layer having an in-plane storage magnetization, wherein the MTJ stack comprises an arrangement for providing an in-plane uniaxial anisotropy in the storage layer, wherein said in-plane uniaxial anisotropy makes an angle with the direction of the write current that is between 5.degree. and 90.degree., and wherein said in-plane uniaxial anisotropy has an energy between 40 and 200 kBT and wherein coercivity is larger than 200 Oe.

The patent application was filed on May 2, 2020 (16/865,348).