R&D: Factors That Control Stability, Variability, and Reliability Issues of Endurance Cycle in ReRAM Devices, Phase Field Study

Journal of Applied Physics has published an article written by Arijit Roy, Min-Gyu Cho, and Pil-Ryung Cha, School of Materials Science and Engineering, Kookmin University, Seoul 02707, Republic of Korea.

Abstract: “The morphological evolution of the conducting filament (CF) predominantly controls the electric response of the resistive random access memory (ReRAM) devices. However, the parameters—in terms of the material and the processing—which control the growth of such CF are plenty. Extending the phase field technique for ReRAM systems presented by Roy and Cha [J. Appl. Phys. 128, 205102 (2020)], we could successfully model the complete SET (to attain low resistance state) and RESET (to attain high resistance state) processes due to the application of sweeping voltage. The key parameters that influence the stability of the multi-cycle I-V response or the endurance behavior are identified. The computational findings of the presented model ReRAM system are practical in correlating the multi-parametric influence with the stability, variability, and reliability of the endurance cycle that affect the device performance and also lead to the device failure. We believe that our computational approach of connecting the morphological changes of the CF with the electrical response has the potential to further understand and optimize the performance of the ReRAM devices.“

Acknowledgments: We acknowledge Creative Materials Discovery Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2016M3D1A1027666) and National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIP) (NRF Nos. 2019R1A2C1089593 and 2019M3A7B9072144) for funding support.