Home » Solid State (SSD, flash key, DNA, etc.) » NXP USA Assigned Patent
NXP USA, Inc., Austin, TX, has been assigned a patent (11,379,307) developed by Roy, Anirban, and Mahatme, Nihaar N., Austin, TX, for an "error rate reduction in a non-volatile memory (NVM) including magneto-resistive random access memories (MRAMs)."...
To get one-year unlimited access to all the News 50,000+ original articles, market reports, company's profiles, press releases, etc. on the worldwide storage industry published by StorageNewsletter.com since November 2007.
If you have already subscribed, please enter your credentials below: