R&D: Silver-Doped Citrus Pectin Resistive Random Access Memory With Multilevel Characteristics

ECS Journal of Solid State Science and Technology has published an article written by Chih-Chiang Yang, Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University, Tai-nan 710, Taiwan, Yun-Ting Tsai, Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan, Hao-Lin Hsu, Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University, Tai-nan 710, Taiwan, Sheng-Po Chang, Institute of Microelectronics & Department of Electrical Engineering, Department of Photonics, National Cheng Kung University, Tainan 701, Taiwan, and Yan-Kuin Su, Green Energy Technology Research Center, Department of Electrical Engineering, Kun Shan University, Tai-nan 710, Taiwan, and Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan.

Abstract: “Electronics based on natural materials have the advantages of simple preparation procedures, low cost, ecofriendliness, and biocompatibility. In this work, the Synthesis of silver doped citrus pectin by using the solution method at 2 mg ml⁻¹ of citrus pectin, Its simple fabrication method ensures the uniform distribution of Ag in citrus pectin thin film. a RRAM device with the Al/Ag-doped citrus pectin/ITO/glass structure was fabricated through the spin-coating method. The results indicated that the best set and reset voltages of the Ag 10%-doped device were 1 and −1.2 V, respectively. The Ag 10%-doped device could switch 517 times with an on/off ratio of 2 × 10³ and could be maintained for more than 10⁴ s, indicating excellent stability and reliability. Furthermore, the characteristics of the multilevel storage of the Ag-doped citrus pectin device were investigated. By adjusting different compliance currents, four different resistive states could be formed in a single device with high stability and reliability. In other words, the device could store two bits in a single cell.“