Antaios Assigned Patent

Antaios, Meylan, France, has been assigned a patent (11,362,266) developed by Drouard, Marc, Valence, France, Vigier, Jeremie, Le Sappey en Chartreuse, France, and Brun-Picard, Jeremy, Sion, Switzerland, for a “magneto resistive memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A memory device may comprise a substrate defining a main plane, a plurality of memory cells each comprising a SOT current layer disposed in the main plane of the substrate and a magnetic tunnel junction residing on the SOT current layer, and a bit line and a source line to flow a write current in a write path including the SOT current layer of a selected memory cell. The source line comprises a conductive magnetic material providing a magnetic bias field extending to the magnetic tunnel junction of the selected memory cell for assisting the switching of the cell state when the write current is flowing.”

The patent application was filed on February 18, 2021 (17/179,084).