Longitude Flash Memory Solutions Assigned Patent

Longitude Flash Memory Solutions, Ltd., Dublin, Ireland, has been assigned a patent (11,361,826) developed by Lee, Sungkwon, Saratoga, CA, and Prabhakar, Venkatraman, Pleasanton, CA, for “asymmetric pass field-effect transistor for nonvolatile memory.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method of performing an operation on a non-volatile memory (NVM) cell of a memory device is disclosed. The pass transistor of the NVM cell is an asymmetric transistor including a source with a halo implant. The source of the pass transistor is coupled to a common source line (CSL) that is shared among NVM cells of a sector of NVM cells. The operation may be performed by applying a first signal to a word line (WLS) coupled to a gate of a memory transistor of the NVM cell and applying a second signal to a bit line (BL) coupled to a drain of the memory transistor of the NVM cell.”

The patent application was filed on July 6, 2020 (16/921,179).