Fudan University Assigned Patent

Fudan University, Shanghai, China, has been assigned a patent (11,348,943) developed by Jiang, Anquan, Chai, Xiaojie, Lian, Jianwei, Jiang, Jun, and Ao, Menghan, Shanghai, China, for “non-volatile ferroelectric memory and method of preparing the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure relates to a non-volatile ferroelectric memory and a method of preparing the same. The ferroelectric memory includes a ferroelectric storage layer, a first electrode and a second electrode, the first electrode and the second electrode each include a buried conductive layer formed by patterning in a surface of the ferroelectric storage layer and an electrode layer formed on the buried conductive layer, and when a write signal in a certain direction is applied between the first electrode and the second electrode, the electric domains of a part of the ferroelectric storage layer between a pair of the buried conductive layers are enabled to be reversed, so that a domain wall conductive passage that electrically connects the first electrode and the second electrode can be established.”

The patent application was filed on July 17, 2020 (16/931,721).