Home » Solid State (SSD, flash key, DNA, etc.) » R&D: Sense Amplifier for ReRAM-Based Crossbar Memory Systems
International Journal of Electronics Letters has published an article written by Hock Leong Chee, Yu Zheng Kok, T. Nandha Kumar, and Haider A.F. Almurib, Department of Electrical and Electronic Engineering, University of Nottingham Malaysia, Malaysia...
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