R&D: Sense Amplifier for ReRAM-Based Crossbar Memory Systems
Simulation with 2×2 memory crossbar is performed and compared with existing voltage-mode and current-mode sense amplifiers and proposed circuit shows better read time (32% and 85%) and energy performance (54% and 59%) than existing methods.
This is a Press Release edited by StorageNewsletter.com on July 1, 2022 at 2:00 pmInternational Journal of Electronics Letters has published an article written by Hock Leong Chee, Yu Zheng Kok, T. Nandha Kumar, and Haider A.F. Almurib, Department of Electrical and Electronic Engineering, University of Nottingham Malaysia, Malaysia.
Abstract: “A voltage-mode sense amplifier circuit designed for resistive random-access memory (ReRAM)-based memory arrays is proposed. The sense amplifier is designed comprising of an inverting buffer so that it can operate at a very low voltage (150 mV), which is the typical READ output voltages of a ReRAM cell while the proposed differential comparator design utilises a reduced number of transistors (20%) compared with conventional design to determine the logic states of the ReRAM cell. A simulation with a 2 × 2 memory crossbar is performed and compared with existing voltage-mode and current-mode sense amplifiers and the proposed circuit shows better READ time (32% and 85%) and energy performance (54% and 59%) than existing methods.“
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