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Boise State University Assigned Patent

Optically gated transistor selector for variable resistive memory device

Boise State University, Boise, ID, has been assigned a patent (11,316,484) developed by Campbell, Kristy A., Boise, ID, for an optically gated transistor selector for variable resistive memory device.

The abstract of the patent published by the U.S. Patent and Trademark Office states: “An optically gated transistor (OGT) device that may be used as a selector device for one or more variable resistive memory devices. The OGT device isolates the one or more variable resistive memory devices when the OGT is not optically activated. The amount of current conducted by the OGT device is dependent on an intensity of light optically applied to the OGT device. The OGT device includes alternating layers of germanium selenide (GeSe) and GeSe plus an additional element deposited on a substrate. The OGT device includes only two electrodes connected to the alternating layers deposited on the substrate. The OGT device may generate an amplified electrical signal with respect to the magnitude of a received optical signal. The OGT device may be used to generate an optical signal having a different wavelength than the wavelength of a received optical signal.

The patent application was filed on July 16, 2019 (16/513,024).

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