Jiangsu Advanced Memory Technology, Jiangsu Advanced Memory Semiconductor, and Alto Memory Technology Assigned Patent

Jiangsu Advanced Memory Technology Co., Ltd., Jiangsu, China, Jiangsu Advanced Memory Semiconductor Co., Ltd., Jiangsu, China, and Alto Memory Technology Corp., Hsinchu County, Taiwan, has been assigned a patent (11,315,632) developed by Wu, Jui-Jen, Hsinchu County, Taiwan, for a “memory drive device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “Disclosed is a memory drive device. The memory drive device comprises a control circuit, a reference voltage generation circuit, and a first switch. The control circuit is used to generate a first signal according to an input signal. The reference voltage generation circuit comprises a reference resistor and is used to generate a reference signal according to the first signal. The first switch is coupled to a memory resistor and is used to generate a drive signal according to the first signal so as to set a resistance value of the memory resistor. When the input signal is decreased and a resistance value of the memory resistor is greater than a resistance value of the reference resistor, the time when the drive signal is decreased is greater than the time when the reference signal is decreased.”

The patent application was filed on June 27, 2018 (17/255,434).