R&D: Investigation of Crystallization Kinetics of Thin Films for PCM Application

IEEE Xplore has published, in 2022 4th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE) proceedings, an article written by Alexey V. Babich, Anastassiya S. Bozhedomova, Dmitriy YunTerekhov, and Daria D. Glebova, Institute of Advanced Materials and Technologies, National Research University of Electronic Technology, Moscow, Russian Federation.

Abstract: “The purpose of this paper is to investigate thermal properties and crystallization kinetics of the Ge 2S b2Te 5 thin films for the phase change memory application. In this regard, the method of differential scanning calorimetry was used. Kinetic parameters were determined by the methodology that was developed earlier. This methodology is based on the combined use of model-free and model-fitting methods. It was found that the effective activation energy at the beginning of crystallization was about 1.8 eV and slightly decreased to about 1.6 eV. The second-order reaction model describes the crystallization process well. The values of the frequency factor depending on the conversion were also found. Obtained results correlate with the model, according to which crystallization takes place in two stages: nucleation and growth of nuclei. In conclusion, it can be said that the materials of the Ge-Sb- Te system (Ge 2 Sb 2 Te 5 in particular) are perspective for application in phase change memory.“