NXP USA Assigned Three Patents

Non-volatile memory with virtual ground voltage provided to unselected column lines during memory write operation
NXP USA, Inc., Austin, TX, has been assigned a patent (11,289,144) developed by Choy, Jon Scott, Ramanan, Karthik, Sanjeevarao, Padmaraj, and Williams, Jacob T., Austin, TX, for a “non-volatile memory with virtual ground voltage provided to unselected column lines during memory write operation.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A non-volatile memory includes virtual ground circuitry configured to generate a virtual ground voltage at a virtual ground node, a memory array of memory cells in which each memory cell includes a select transistor and a storage element and is coupled to a first column line of a plurality of first column lines, and a first decoder configured to select a set of first column lines for a memory write operation to a selected set of the memory cells. The non-volatile memory also includes write circuitry configured to receive a write value for storage into the selected set of memory cells, and a first column line multiplexer configured to, during the memory write operation, couple each selected first column line of the set of first column lines to the write circuitry, and couple each unselected first column line of the plurality of first column lines to the virtual ground node.”

The patent application was filed on September 25, 2020 (17/032,537).

Non-volatile memory with multiplexer transistor regulator circuit
NXP USA, Inc., Austin, TX, has been assigned a patent (11,250,898) developed by Sanjeevarao, Padmaraj, Williams, Jacob T.,Ramanan, Karthik, and Choy, Jon Scott, Austin, TX, for a “non-volatile memory with multiplexer transistor regulator circuit.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “As disclosed herein, a memory includes an array of resistive memory cells and a voltage regulator circuit that provides a regulated voltage based on a circuit with a replica resistive storage element. The regulated voltage is applied to a mux transistor of a multiplexer of a column decoder that is used to select a particular column line of a memory array from a set of column lines to provide the proper voltage to the memory cell during a write operation to the memory cell.”

The patent application was filed on April 10, 2020 (16/845,315).

Non-volatile random access memory
NXP USA, Inc., Austin, TX, has been assigned a patent (11,205,680) developed by Roy, Anirban, Austin, TX, for a “non-volatile random access memory, NVRAM.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A semiconductor device and methods for making the same are disclosed. The device may include: a first transistor structure, a second transistor structure, a capacitor structure comprising a trench in the substrate between the first and second transistor structures, the capacitor structure further comprising a doped layer over the substrate, a dielectric layer over the doped layer, and a conductive fill material over the dielectric layer, a first conductive contact from the first transistor structure to a first bit line, a second conductive contact from the second transistor to a non-volatile memory element, and a third conductive contact from the non-volatile memory element to a second bit line.”

The patent application was filed on September 3, 2019 (16/558,818).