Taiwan Semiconductor Manufacturing Company Assigned Six Patents

PCRAM analog programming by gradual reset cooling step
Taiwan Semiconductor Manufacturing Company, Ltd., (TSMC) Hsinchu, Taiwan, has been assigned a patent (11,289,161) developed by Wu, Jau-Yi, Zhubei, Taiwan, for a “PCRAM analog programming by a gradual reset cooling step.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “In some embodiments, the present disclosure relates a phase change random access memory device that includes a phase change material (PCM) layer disposed between bottom and top electrodes. A controller circuit is coupled to the bottom and top electrodes and is configured to perform a first reset operation by applying a signal at a first amplitude across the PCM layer for a first time period and decreasing the signal from the first amplitude to a second amplitude for a second time period, and to perform a second reset operation by applying the signal at a third amplitude across the PCM layer for a third time period and decreasing the signal from the third amplitude to a fourth amplitude for a fourth time period greater than the second time period. After the fourth time period, the PCM layer has a percent crystallinity greater than the PCM layer after the second time period.”

The patent application was filed on December 3, 2020 (17/110,647).

Phase change memory device having tapered portion of bottom memory layer
Taiwan Semiconductor Manufacturing Company, Ltd., (TSMC) Hsinchu, Taiwan, has been assigned a patent (11,283,011) developed by Lee, Tung-Ying, Hsinchu, Taiwan, Yu, Shao-Ming, Hsinchu County, Taiwan, and Lin, Yu-Chao, Hsinchu, Taiwan, for a “phase change memory device having tapered portion of the bottom memory layer.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory device includes a bottom electrode, a bottom memory layer, a top memory layer, and a top electrode. The bottom memory layer is over the bottom electrode. The bottom memory layer has a first height and includes a tapered portion and a neck portion. The tapered portion has a second height. A ratio of the second height to the first height is in a range of about 0.2 to about 0.5. The neck portion is between the tapered portion and the bottom electrode. The top memory layer is over the bottom memory layer. The tapered portion of the bottom memory layer tapers in a direction from the top memory layer toward the neck portion. The top electrode is over the top memory layer.”

The patent application was filed on November 17, 2020 (16/950,753).

Phase change memory structure
Taiwan Semiconductor Manufacturing Company, Ltd., (TSMC) Hsinchu, Taiwan, has been assigned a patent (11,276,818) developed by Wu, Jau-Yi, Hsinchu County, Taiwan, for “phase change memory structure and the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “The present disclosure provides a phase change memory structure, including a bottom electrode, a first phase change material contacting a top surface of the bottom electrode, a first switch over the first phase change material, a second phase change material over the first switch, and a top electrode over the second phase change material.”

The patent application was filed on May 26, 2020 (16/883,865).

Phase-change memory and method of forming
Taiwan Semiconductor Manufacturing Company, Ltd., (TSMC) Hsinchu, Taiwan, has been assigned a patent (11,245,072) developed by Wu, Jau-Yi, Hsinchu, Taiwan, for “phase-change memory and method of forming same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A device and a method of forming the same are provided. The device includes a substrate, a first dielectric layer over the substrate, a bottom electrode extending through the first dielectric layer, a first buffer layer over the bottom electrode, a phase-change layer over the first buffer layer, a top electrode over the phase-change layer, and a second dielectric layer over the first dielectric layer. The second dielectric layer surrounds the phase-change layer and the top electrode. A width of the top electrode is greater than a width of the bottom electrode.”

The patent application was filed on December 26, 2019 (16/727,363).

Phase change random access memory
Taiwan Semiconductor Manufacturing Company, Ltd., (TSMC) Hsinchu, Taiwan, has been assigned a patent (11,233,197) developed by Yen, Chun-Hsu, Hsu, Yu-Chuan, and, Yang, Chen-Hui, Hsinchu, Taiwan, for a “phase change random access memory device.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode, forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode, forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode, filling the first void with the first dielectric layer, and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.”

The patent application was filed on November 19, 2019 (16/688,976).

Method for forming PCM cell with low deviation contact area between heater and phase change element
Taiwan Semiconductor Manufacturing Company, Ltd., (TSMC) Hsinchu, Taiwan, has been assigned a patent (11,189,787) developed by Tsai, Yi Jen, New Taipei, Taiwan, and Liu, Shih-Chang, Alian Township, Taiwan, for a “method for forming a phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A phase change memory (PCM) cell with a low deviation contact area between a heater and a phase change element is provided. The PCM cell comprises a bottom electrode, a dielectric layer, a heater, a phase change element, and a top electrode. The dielectric layer overlies the bottom electrode. The heater extends upward from the bottom electrode, through the dielectric layer. Further, the heater has a top surface that is substantially planar and that is spaced below a top surface of the dielectric layer. The phase change element overlies the dielectric layer and protrudes into the dielectric layer to contact with the top surface of the heater. Also provided is a method for manufacturing the PCM cell.”

The patent application was filed on August 11, 2020 (16/990,069).