R&D: Flash Memory and Manufacturing Technology for Sustainable World

IEEE Journal of the Electron Devices Society has published an article written by Kazunari Ishimaru, Makoto Fujiwara, Hidenori Miyagawa, and Yuta Aiba, Institute of Memory Technology Research and Development, Kioxia Corporation, Yokkaichi, Mie, 512-8550 Jaoan.

Abstract: “In today’s data-driven society, memory is an unavoidable component. IoT and 5G are accelerating data generation exponentially, and the demands of high-capacity memory are increasing. Flash memory is a crucial infrastructure component and inevitable for Data Center. The advantages of a Solid-State Drive over a Hard Disk Drive are power consumption and volume per giga-byte. Low power consumption of storage devices, which are components of the data center itself, is critical in reducing power consumption, which has become a primary social concern. This paper describes current efforts and future trends in storage devices and their manufacturing technologies for realizing a sustainable society. New device structure which increases storage capacity with significant reduction of both materials and process steps, environmentally friendly and efficient manufacturing technologies and future technologies under consideration for even higher capacity will be shown. These technological innovations will make it possible to realize a society that enriches people’s lives.“