R&D: Novel Field-Effect Transistor Sensor for DNA Storage Monitoring

IEEE Transactions on Instrumentation and Measurement has published an article written by Abbas Panahi, Lassonde School of Engineering, Electrical Engineering and Computer Science (EECS) Department, York University, ON, Canada, Morteza Ghafar-Zadeh, Anthony Scimè, department of Biology, York University, Toronto, ON, Canada, Sebastian Magierowski, and Ebrahim Ghafar-Zadeh, Lassonde School of Engineering, Electrical Engineering and Computer Science (EECS) Department, York University, ON, Canada.

Abstract: “This paper presents a novel open gate junction field effect transistor (OG-JFET) based sensor that can be used for various life science applications including Deoxyribonucleic Acid (DNA) storage monitoring. We put forward the design, modeling, implementation and characterization of OG-JFET sensor using a foundry process through CMC Microsystems. We also demonstrate and discuss the functionality and applicability of the proposed sensor for monitoring DNA samples suitable for DNA storage applications. Synthetic storage has emerged as an intriguing data storage solution with high density and long-term preservation potential. Most common modalities include the conversion of digital data into synthesized nucleotides, the physical storage of DNA materials, and reading out the data via sequencing and other computational processes. Among these, this paper tackles the challenge of physical storage monitoring of DNA materials by developing a sensor for measurement of DNA samples in dry conditions. The proposed sensor reveals a linear response of sensor towards DNA concentration in ultra-pure water. Across a 0.7 mm2 sensing area, a DNA mass concentration from approximately 100 ng/uL to 400 ng/uL has been detected using the OG-JFET demonstrating a sensitivity of 30 μA/(ng/uL). These performance quantities imply a promising role for OG-JFETs in emerging biotechnology applications including DNA storage monitoring.“