Industrial Technology Research Institute Assigned Two Patents

Magnetic memory structure
Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan, has been assigned a patent (11,227,990) developed by Shakh, Ziaur Rahaman, Wang, I-Jung, Zhudong Township, Taiwan, and Wei, Jeng-Hua, Taipei, Taiwan, for a “magnetic memory structure.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A magnetic memory structure is provided. The magnetic memory structure includes a magnetic tunneling junction (MTJ) layer and a heavy-metal layer. The MTJ layer includes a pinned-layer, a barrier-layer formed under the pinned-layer and a free-layer formed under the barrier-layer. The heavy-metal layer is formed under the free-layer. The barrier-layer has a first upper surface, the pinned-layer has a lower surface, and area of the first upper surface is larger than area of the lower surface.”

The patent application was filed on Filed: July 17, 2019 (16/514,523).

Ferroelectric memories
Industrial Technology Research Institute (ITRI), Hsinchu, Taiwan, has been assigned a patent (11,217,661) developed by Lin, Yu-De, Taoyuan, Taiwan, Lee, Heng-Yuan, Hsinchu County, Taiwan, Yeh, Po-Chun, Wang, Chih-Yao, and Yang, Hsin-Yun, Taichung, Taiwan, for “ferroelectric memories.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A ferroelectric memory is provided. The ferroelectric memory includes a substrate, a first conductive layer disposed on the substrate, a patterned oxide layer disposed on the first conductive layer and the substrate, exposing a part of the first conductive layer, a second conductive layer disposed on the exposed first conductive layer and the patterned oxide layer, an antiferroelectric layer disposed on the exposed first conductive layer and the second conductive layer, a ferroelectric layer disposed on the second conductive layer and located on the antiferroelectric layer, a conductive oxide layer disposed between the antiferroelectric layer, and a third conductive layer disposed on the conductive oxide layer and between the ferroelectric layer.”

The patent application was filed on April 7, 2020 (16/842,589).