Lontium Semiconductor Assigned Patent

Lontium Semiconductor Corp., Anhui, China, has been assigned a patent (11,216,393) developed by Guo, Xianghao, Liu, Chuanxing, Chen, Feng, Xia, Hongfeng, Su, Jin, Guan, Haowei, Ren, Diansheng, Tai, Lianliang, Zhou, Dafeng, Li, Guangren, and Xie, Changqian, Anhui, China, for “storage device and method for manufacturing the same.“

The abstract of the patent published by the U.S. Patent and Trademark Office states: “A conversion apparatus, a storage device and a method for manufacturing the same are provided. The storage device may include a DDR storage layer, a DDR interface layer, a conversion logic circuit layer, and a peripheral interface layer. The peripheral interface layer may include a GDDR interface layer or a PCIe interface layer. The conversion logic circuit layer may process, by using DDR storage logic, data obtained through the peripheral interface layer and transfer processed data to the DDR interface layer, or process, by using GDDR storage logic, data obtained through the DDR interface layer and transfer processed data to the peripheral interface Layer. The DDR storage layer may be connected to the DDR interface layer, so that the conversion logic circuit layer can convert the storage logic of the data from DDR to GDDR or from GDDR to DDR.”

The patent application was filed on May 12, 2020 (15/930,227).